| 摘要 |
PURPOSE:To form an open groove without damaging a semiconductor by laminating a conductive metal film which mainly contains aluminum, silver, copper, magnesium or titanium on a light transmission conductive film which mainly contain indium oxide or tin oxide on a semiconductor, a conductive metal film which mainly contains chromium and a silicon monoxide film. CONSTITUTION:A substrate such as a glass single crystal semiconductor, or an organic resin or a metal substrate 1 such as a stainless steel is provided, and non- single crystal semiconductor film 4 made of hydrogenated amorphous silicon is formed on the substrate. A light transmission conductive film made of tin oxide or indium oxide, i.e., ITO 5 is fored by electron beam depositing method on the film 4, a conductive metal film 6 which mainly contains Al, Ag, Cu, Mg, Ti, Ni or Cr as a multilayer conductive metal is formed by an electron beam depositing method, and an SiO film 7 is further laminated by the same electron beam depositing method to form a laminate 9. |
