| 摘要 |
PURPOSE:To improve the performance of a semiconductor device acting as a bucket brigade by a method wherein conductivity of the channel in a controlling MOS transistor and the quantity of signals transmitted from the main current path into an output buffer-amplifier circuit are controlled for an output waveform containing less noise. CONSTITUTION:The drain electrode of a controlling transistor (TR) 11, located between a point 12 in a transfer stage and an output TR6, is connected to the gate electrode of its own and then to the point 12. The source electrode of TR 11 is connected to the gate electrode of TR6. Accordingly, TR11 is conductive only when the potential of the point 12 is higher, when signals overcoming the internal resistance of TR11 move forward to be charged into the gate electrode of TR6 and the region around it. A large-scale spike in voltage generated at the point 12 at the moment of transfer does not reach TR6. TR11 is thrown into non-conductive conditions upon completion of the charging, when the gate potential of TR6 is lower by the gate threshold voltage of TR11. |
