| 摘要 |
PURPOSE:To improve the margin of a magnetic bubble transfer bias magnetic field in a minor loop part by allowing the diameter and the height of a magnetic bubble to have a specific relation and regulating the ion dose of an abnormal bubble suppressing ion implantation layer when the magnetic bubble having a minute diameter is used. CONSTITUTION:In the minor loop part of a magnetic bubble memory element, the ion dose of an ion implantation layer 3' is set to 1X10<13>-1X10<14>/cm<2> and a diameter (d) of the magnetic bubble and its height (h) are set to satisfy h/d<= 0.8 if a magnetic bubble 2a' having <=2mum diameter. Thus, since the magnetic bubble transfer driving force is increased, the magnetic bubble transfer bias magnetic field margin is improved, and a high-density magnetic bubble memory element is attained. |
