Process for producing a semiconductor component having patterns produced by reactive etching

摘要

The patterns are to be produced in III-V material, for example InP, GaAs and their ternary and quaternary compounds. For this purpose, dry etching using accelerated ions is of particular importance, in particular for the micrometer and submicrometer range (RIE = reactive ion etching; RIBE = reactive ion beam etching). Mirror quality is required for the etched areas. For this purpose, according to the invention, a gas mixture composed only of argon and oxygen is used as etching gas. The selectivity with respect to normal photoresists does not in this case require additional metal masking. Aggressive deposits which may result in subsequent corrosion are also avoided. Normal systems are readily suitable; requirements relating to safety, environmental pollution and the like are reduced.