Bipolar Transistor-Field Effect Transistor Composite Circuit.

摘要

A bipolar transistor-complementary field effect transistor composite circuit for performing the same logic function as that of a complementary field effect transistor logic circuit, comprises;
<UnorderedLists id="ula01" listStyle="none"><ListItem>a first bipolar transistor (11) having a collector (C) of one conductivity type connected to a first potential (V<Sub>cc</Sub>) and an emitter (E) of one conductivity type connected to an output terminal (V<Sub>o</Sub>),</ListItem><ListItem>a second bipolar transistor (12) having a collector (C) of one conductivity type connected to the output terminal (V<Sub>o</Sub>) and an emitter (E) of one conductivity type connected to a second potential (GND),</ListItem><ListItem>a first field effect transistor circuit (21) connected between a base (B) and the collector (C) of the first bipolar transistor (11), the first field effect transistor circuit having the same circuit configuration as that of an other conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit,</ListItem><ListItem>a second field effect transistor circuit (14) connected between the base (B) of the first bipolar transistor (11) and the second potential (GND), the second field effect transistor circuit having the same circuit configuration as that of a one conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit,</ListItem><ListItem>a third field effect transistor circuit (31) connected between a base (B) of and the collector (C) of the second bipolar transistor (12), the third field effect transistor circuit having the same circuit configuration as that of the one conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit.</ListItem></UnorderedLists>

The composite circuit has a fourth field effect transistor circuit (51) of the one conductivity type connected between the base (8) of the second bipolar transistor (12) and the second potential (GND) to respond to an output of the complementary field effect transistor circuit constructed by the first field effect transistor circuit (21) and the second field effect transistor circuit (41). The same input (VI) as that to the corresponding field effect transistors in the complementary field effect transistor logic circuit is applied to the first, second and third field effect transistor circuits.