发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To form a contact region without widening the gap between a wiring oblique in relation to the X, Y axes and a side of the contact region by a method wherein the contact region is so formed that at least one of its sides is parallel with the oblique wiring. CONSTITUTION:A wiring 4 is formed between circuit blocks 1 and 2 that are oblique in relation to the X, Y axes. A contact region 5 is formed, also oblique in relation to the X, Y axes, with one of its sides parallel with the wiring 4. This design does not create protrusions in the direction of the gap between wirings, narrowing the gap between the wirings more than in the conventional technique wherein the sides of a contact lie parallel with the X, Y axes. This ensures higher density in wiring. This covers all the cases wherein oblique contact patterns are used in any circuit block.
申请公布号 JPS60111443(A) 申请公布日期 1985.06.17
申请号 JP19830219963 申请日期 1983.11.22
申请人 NIPPON DENKI KK 发明人 KAWAKAMI YASUSHI
分类号 H01L23/522;H01L21/28;H01L21/768;H01L29/41 主分类号 H01L23/522
代理机构 代理人
主权项
地址