| 摘要 |
PURPOSE:To prevent the disconnection of an electrode layer in the case of its formation in the upper part by a method wherein the surface of the electrode is flattened by relatively thick burial thereof in a small contact hole. CONSTITUTION:A diffused layer 12 and an oxide film 13 are formed on the surface of an Si substrate 11, and an intermediate layer 14 of palladium or Si is formed on the surface of the base diffused layer through a contact hole bored in the oxide film. Thereafter, the surface part on the oxide film is flattened by burial-forming an electrode wiring 15 of Al of the like. |
