| 摘要 |
PURPOSE:To selectively anneal only a gate oxide film by a method wherein annealing for recovery from the damage of the gate oxide film is performed by irradiation with laser beams having a wavelength showing the absorption peak of the gate oxide film. CONSTITUTION:After exposure with charged particles P, laser annealing is performed to remove the trap level. At this time, a semiconductor substrate 1 is an Si substrate; therefore its gate oxide film 2 is of SiO2, and the wavelength of the laser beam L is set at about 9.3mum so as to be at the absorption peak of SiO2. This beam is hardly absorbed to the substrate, but absorbed most in the SiO2. Therefore, the film 2 comes to higher temperatures, and fixed charges and the trap level are annealed out. |
