| 摘要 |
PURPOSE:To produce a superconductive thin film of a single cyrstal oxide having excelent electrical properties, by growing an oxide thin film having the same structure as the superconductive oxide on a saphire single crystal substrate, and growing the single crystal thin film of the superconductive oxide on the grown oxide thin film. CONSTITUTION:The thin film of an oxide (SrTiO3, BaTiO3, etc.) having a perowskite crystal structure same as that of a superconductive oxide BaPb1-xBixO3 (0.05<x<0.30) and having a lattice constant close to that of the superconductive oxide, is grown on a saphire single crystal by the epitaxial growth using a high- frequency magnetron sputtering process. The obtained product is used as the new substrate, and a thin film of the superconductive oxide is formed on the composite substrate by the epitaxial growth using a high-frequency magnetron sputtering process. |
