| 摘要 |
PURPOSE:To realize higher frequency operation by providing both gate insulating film and gate electrode on the amorphous semiconductor which forms the channel forming region in the periphery of two sides of layered body where the gate electrodes are layered in 5 layers and moreover providing the upper end part of gate electrode without extending it to the upper part of layered semiconductor. CONSTITUTION:A conductive film 12 which becomes the lower electrode is deposited on a substrate 1 such as quartz glass, a P type or N type first amorphous Si layer 13, an I type second amorphous Si layer 14, an N type or P type third amorphous layer 15 are layered thereon, the surface is then covered with a conductive layer 16 consisting of ITO, etc. Next, such layered body is etched to the predetermined pattern. Intrinsic or P type or N type fourth amorphous layer 25, gate insulating film 24 and gate electrode 20 are individually provided from the surface to the side surface. Thereby, the layered body located at the center is used in common, and a couple of IG FET can be obtained on a single substrate. |
