| 摘要 |
PURPOSE:To contrive to generate no insulating property on a contact interface in a photoelectric conversion semiconductor device by a method wherein the device is made into a constitution, wherein the first electrode of a photoelectric conversion element and the second electrode of its adjacent photoelectric conversion element are electrically coupled by forming a conductive film made of oxide. CONSTITUTION:A light-transmittig conductive film 37 is formed on the whole surface of a light- transmitting substrate 1. A first opening groove 13 is formed in this film 37 and a first electrode 12 is respectively formed at each interelement region 31 and 11. A non-single crystal semiconductor layer 3, where a photoelectromotive force is made to generate by performing a light-irradiation, is formed on the electrodes 12 and the opening groove 13. A second opening groove 18 is formed in the side way of the opening groove 13 by a laser scribing process. The opening groove 13 and the insulator made of oxide in its vicinity are removed, and at the same time, a group is formed under the electrode 2 of the first element 31. A second electrode 4 on the back surface and a coupling part 30 are formed. Conductive oxide films 45 and 45' are used for forming the electrode 4. As a result, the bottom surface 6 of the film 37 and the electrode 4 can be electrically well coupled, and moreover, there is no possibility that the coupling part 30 is migrated in the semiconductor, because the conductor constituting the coupling part 30 has been constituted of oxide from the first. |
