Selective control of discharge position in gas discharge display/memory device

摘要

A gas discharge display/memory device is shown wherein the discharge is selectively and advantageously controlled, particularly for increased light output and panel brightness. The device comprises an ionizable gaseous medium in a thin gas chamber between a pair of opposed dielectric charge storage member, each member backed by an array of electrodes with each array oriented relative to the other so as to form a multiplicity of gas discharge cells. Both opposing storage surfaces of each cell are coated with a first layer of low electron yield material and a second layer of high electron yield material-in the geometric form of dots, lines, strips, etc.-the second layer being appropriately positioned such that it is surrounded by the first layer of low electron yield material and such that two opposing surfaces of high electron yield material at or near a discharge cell site cause the cell discharge to occur at the pair of opposing surfaces of high electron yield material. The relative position of the high electron yield material surfaces can be utilized to maximize the visible light output from the panel. The Townsend's (gamma) second coefficient of the high electron yield material is at least 1.5 times the Townsend's second coefficient of the low electron yield material.