| 摘要 |
PURPOSE:To obtain a photoconductive member having superior photosensitivity by successively forming a photoconductive amorphous Si-Ge layer contg. a conductivity controlling substance and C distributed ununiformly in the thickness direction and an amorphous layer contg. Si and N on a support. CONSTITUTION:The 1st photoconductive layer 102 of amorphous silicon germanium hydride or amorphous silicon germanium halide as an amorphous material is formed on a support 101 of Al or the like. At this time, a conductivity controlling substance such as a III or V group element in the periodic table is incorporated into the layer 102 so that it is distributed on the support 101 side, and C atoms are also incorporated into the layer 102 so that they are distributed uniformly or ununiformly in the thickness direction. The 2nd layer 103 of an amorphous material contg. Si atoms and N atoms is then formed on the layer 102 to obtain the desired photoconductive member 100. |
