| 摘要 |
<p>PURPOSE:On a semiconductor device with a redundant memory, to prevent the deterioration of quality at the time of breaking of a fuse by a method wherein the second layer is arranged for absorbing extra energy of a raser beam through a insulater under a fuse link. CONSTITUTION:A second layer 6 is arranged through a insulating film 5 under a fuse link 3 which is convered by a PSG film 4. It is desirable that material of the second layer 6 is composed of the same material of the fuse link 3, which will be cut, namely polysilicon, high melting point metal or silicide compound. Even if laser beam which has larger energy necessary to cut the fuse link 3 is used, surplus energy is absorbed in the second layer 6 and is prevented to reach the field oxide film 2 or a silicon substrate 1.</p> |
