Kristallaufwachsvorrichtung und -verfahren

摘要

A method and apparatus for growing an epitaxial layer on a semiconductor substrate by the use of liquid phase transport and a fixed temperature gradient are disclosed. The apparatus consists of a lower block and a movable upper block which slides across the lower block. The lower block has one or more recessed portions suitable for holding one or more semiconductor wafers, such as gallium arsenide, on which an epitaxial layer is desired. The upper block similarly has one or more centerbores with slideable pistons disposed therein. A solvent such as gallium and a semiconductor source material such as a gallium arsenide wafer are located in the centerbore below the piston. Growth of the epitaxial layer on the substrate occurs at an elevated temperature when the centerbore of the upper block is in registration with the recessed portion of the lower block and the lower block is at a temperature that is slightly lower than the temperature of the upper block. The method includes the step of sliding the blocks so that the centerbore is out of registration with the recessed portion of the lower block thereby removing the solvent from the surface of the epitaxial layer to terminate the epitaxial growth.