发明名称 HIGH-MOLECULAR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To select an arbitrary shape while lightening and mass-producing the titled semiconductor elements by forming a junction surface to the surface of an electrochemically oxidized vinylcarbazole group polymer. CONSTITUTION:A film is formed on an anode from an organic solvent solution of a vinylcarbazole group polymer. The anode is dipped in an electrolyte solution and anodic-oxidized while using an electrode with a polymer film as a work electrode and a platinum electrode as an opposite electrode in a reaction vessel under a nitrogen atmosphere. The film is washed, and dried under a vacuum. A metal such as aluminum is evaporated on one surface of the thin-film under the vacuum, and gold is evaporated on the other surface. Accordingly, excellent rectifying characteristics are obtained.
申请公布号 JPS6070776(A) 申请公布日期 1985.04.22
申请号 JP19830177654 申请日期 1983.09.26
申请人 HITACHI KASEI KOGYO KK 发明人 KANEGA FUMIAKI;MIKAWA REI;SHIROTA YASUHIKO
分类号 H01L51/42;H01L29/861;H01L51/00;H01L51/05 主分类号 H01L51/42
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