| 摘要 |
PURPOSE:To provide a bump electrode having good external appearance in a short time by laminating metal which is readily oxidized and becomes high resistance and metal which is dissolved with plating solution in an electrode forming portion, thereby almost preventing a plating current in an improper semiconductor element. CONSTITUTION:Many Si elements 2 having P-N junctions are formed on an Si substrate 1, and a Ti film 13 which has 500-2,000Angstrom thick and an Ag film 14 which has 2,000-10,000Angstrom are laminated on the polysilicon layer 5 of the electrode forming portion 3. The substrate 1 is disposed on a jet type plating unit 8 to act cyan plating solution 9, and a power source 11 is connected between the N type layer of the substrate 1 and the electrode 10 in the plating solution. When half of Zener voltage of the element is added in reverse polarity for 5min, the film 14 on the improper element is dissolved in the plating solution, the film 13 is exposed to produce a TiO2 film 13' on the surface, and the plating layer is concentrically laminated on the portion 3 of the element 2. Since an abnormal swelling is less in this method a reverse voltage applying time for correcting the shape of the electrode can be shortened, thereby obtaining a pump electrode in high production efficiency and preferable external appearance. |
