Epitaxial wafer of compound semiconductor display device

摘要

An epitaxial wafer of a compound semiconductor comprising a single crystalline semiconductor substrate consisting of GaP and an active layer consisting of GaAs1-xPx, having a mixed crystal ratio (x) in the range of from 0.5 to 1 is used for an LED. According to the present invention, between the single crystalline semiconductor substrate and the active layer, a light-absorbing layer consisting of GaAs1-xPx having the mixed crystal ratio (x) smaller than that of the active layer, is formed to suppress the reflection of light from the surface of the substrate.