| 摘要 |
PURPOSE:To remove a film which contains silicon covered on the interior of a film forming device at a high etching speed by generating a plasma with mixture gas which contains carbon tetrafluoride and sulfur hexafluoride in the device. CONSTITUTION:A plasma is generated with mixture gas which contains carbon tetrafluoride, sulfur hexafluoride and oxygen in a film forming device, and the film which contains silicon covered on the interior of the device is removed by etching. For example, flow rate ratio of the mixture gas is, for example, set to CF4:SF6:O2=40:40:20, the pressure in a sputtering device is set to approx. 1torr., and high frequency power is applied between a substrate electrode 11 and a cleaning electrode 13 to generate the plasma. |
