| 摘要 |
PURPOSE:To provide a titled device which can form a nitride film having good quality at a low temp. with good mass productivity by the constitution in which a gaseous mixture contg. gaseous hydrazine is supplied into an evacuated reaction vessel and is irradiated with light from an optical system to induce a reaction by photoexcitation. CONSTITUTION:An optical nitride film forming device is provided with a reaction vessel 2 provided with a light source 6 such as a mercury-arc lamp or the like, an optical system consisting of a reflector 7, a quartz window 8, etc. for conducting the light from the light source 6 onto sample substrates 3 and an evacuating system 1 as well as a gas supply system 9 provided with a purge gas supply pipe 91 for preventing the contamination of said window 8, a reactive gas supply pipe 92, etc. for supplying reactive gas contg. nitrogen as an element into the vessel 2. The gaseous mixture composed of gaseous Si2H6 and gaseous N2H4 is supplied as the reactive gas into the vessel 2 of the above-mentioned device in which about 1Torr is maintained while the substrates 3 placed on a rotary table 4 are heated to and held at about 300-350 deg.C by a heater 5 under irradiation of light thereto. The reactive gas is thus brought into reaction by photoexcitation and the dense SiN film having a low hydrogen content is formed on the substrates 3 without damage at a high rate of deposition. |
