| 摘要 |
PURPOSE:To prevent the retardation of the speed of the formation of a film in a photo-CVD method by removing the film formed in a film forming chamber in a cleaning chamber by a moving window between the film forming chamber and the cleaning chamber. CONSTITUTION:A cleaning chamber 6 and a rotary window 7 are mounted next to a film forming chamber 3. A film of Si, etc. adhering on the rotary window 7 in the film forming chamber 3 is removed through etching at a stage when the film is entered into the cleaning chamber 6 in which Freon 14 (CF4) gas plasma, etc. are generated, and a window 4 in the film forming chamber 3 and the rotary window 7 are kept under a transparent state at all times. |
