| 摘要 |
PURPOSE:To obtain a semiconductor device, which is suitable for high speed bipolar memories and has a capacitor characterized by a small area and a large capacity, by forming a P-N junction in the direction perpendicular to an Si substrate, forming an insulating film having high permittivity on the surface, thereby forming the capacitor. CONSTITUTION:A P-N junction is formed at an interface between a P-type diffused region 5, which is formed in the direction perpendicular to a semiconductor substrate surface, and an N-type diffused region 4. A high permittivity insulating film 7 is formed on the surface of the N(P)-type diffused region 4(5), which is exposed on the surface of the semiconductor substrate. The high permittivity insulating film 7 is coated with an electrode 8. A P-N junction diode and an MIS type capacitor are formed in parallel between the P(N)-type diffused regions 4(5) and the electrode 8. When an insulating film having high permittivity such as a tantalum oxide film is used as the dielectric 7, a capacitor having a small area and a large capacity can be formed. Therefore, the area of the LSI can be remarkably reduced. |
