| 发明名称 |
Method of producing semiconductor device |
| 摘要 |
A silicon wafer having a tungsten and/or molybdenum film formed on its surface is heat-treated in hydrogen containing water vapor. Thus, silicon can be selectively oxidized without substantially oxidizing tungsten and/or molybdenum.
|
| 申请公布号 |
US4505028(A) |
申请公布日期 |
1985.03.19 |
| 申请号 |
US19840571946 |
申请日期 |
1984.01.19 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOBAYASHI, NOBUYOSHI;IWATA, SEIICHI;YAMAMOTO, NAOKI;MATSUO, HITOSHI;HOMMA, TEIICHI |
| 分类号 |
H01L29/78;H01L21/033;H01L21/266;H01L21/28;H01L21/316;H01L21/32;H01L21/321;H01L21/336;H01L21/762;(IPC1-7):H01L21/44;H01L29/40 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
