发明名称 |
Semiconductor devices for information storage - provided with silicon nitride coating |
摘要 |
<p>Semiconductor devices comprising single or multilayer insulating coating onto which semiconductor clusters or >=1 thin films of Si or Ge are located according to the Parent Patent are provided with a Si3N4 coating on the clusters or thin films. Thus a storage capacity is provided which can control the existance, polarity and amt. of the electric charge caught by the insulating coating.</p> |
申请公布号 |
DE2214305(A1) |
申请公布日期 |
1972.10.05 |
申请号 |
DE19722214305 |
申请日期 |
1972.03.24 |
申请人 |
YAMAZAKI S;TDK ELECTRONICS CO LTD |
发明人 |
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分类号 |
H01L21/8247;G11C11/34;G11C11/40;G11C17/00;H01L21/316;H01L23/29;H01L29/00;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L11/14 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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