发明名称 VAPOR DEPOSITION MATERIAL GASIFYING APPARATUS
摘要 PURPOSE:To generate vapor deposition gas always having constant pressure and concn., by evaporating vapor diposition substance under heating in a hermetically closed container, and controlling a heater and the flow control valve of diluting gas on the basis of the pressure measured value of the evaporated substance. CONSTITUTION:A vapor deposition material W is put in a hermetically closed container 1 which is, in turn, evacuated by a vacuum pump 15 to form a vacuum atmosphere. The vapor depostion material W is heated by the ring shaped heater 5 provided to the outside of the container 1 and evaporated. Gas pressure increases as the amount of evaporated gas increases and the evaporated gas is supplied to a vapor deposition reactor from an outlet 6 through a discharge pipe 8 having a capillary 7. In this case, the pressure of the evaporated gas is measured by a gas pressure detector 11 and the heater 5 and the flow control valve 18 of diluting gas are controlled on the basis of the measured result to send vapor having constant pressure and concn. to a vapor depostion furnace while controlling the evaporation amount and the flow amount the diluting gas.
申请公布号 JPS6046373(A) 申请公布日期 1985.03.13
申请号 JP19830153524 申请日期 1983.08.22
申请人 YANAKO KEISOKU:KK 发明人 TAKAHASHI KOUTAROU
分类号 C23C16/44;C23C14/24;C23C16/448;H01L21/203 主分类号 C23C16/44
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