| 摘要 |
PURPOSE:To eliminate the disconnection of a second layer wiring metal while ensuring even the connection of first and second wiring metals by forming an inter-layer insulating film in double layer structure consisting of a nitride film and an oxide film and bringing the nitride film side into contact with the surface of the first wiring metal when the first and second wiring metals are insulating and isolated by using the inter-layer insulating film. CONSTITUTION:The surface of a semiconductor substrate 1 is coated with an SiO2 film 2, a first wiring metallic film 41 consisting of Al is formed on the film 2, and a nitride film 51 is applied on the film 41. A resist film 81 having a predetermined pattern is formed on the film 51, the exposed section of the film 51 is removed through dry etching, and the film 41 is also etched by a phosphorus oxygen etchant to form a first layer wiring metal 4 having a prescribed shape. The film 81 is removed, an SiO2 film 5 is formed to the whole surface through a CVD method and coated with a resist film 8 for shaping a through- hole, a hole 61 with an undercut is bored by using a hydrofluoric acid group etchant and the film 51 is exposed to the hole 61. The film 51 in the exposed section is removed through dry etching using a CF4 group gas. |
