发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To prevent reduction in the sensitivity of an X-ray sensitive resist film formed on a body for transfer by laminating a Langmuir film on the resist film and carrying out exposure with X-rays. CONSTITUTION:Exposure is carried out with characteristic X-rays Mo-L(lambda=5.4Angstrom )1 from a rotating anticathode type X-ray source using Mo as a target. An NPR resist 4 is applied to a wafer to 1mum thickness and prebaked at 80 deg.C. Layers of omega-tricosenoic-acid are laminated as a Langmuir film 3, and proximity exposure under the presence of air between a mask and the wafer and development with a developing soln. for 3min are carried out. When four or more layers are laminated, the total thickness is made equal to the residual thickness of a film in helium and the effect of oxygen can be eliminated. Since the film 3 is a very thin film called a four-molecular layer, the attenuation of X-rays is negligibly small and uniform lamination can be carried out. Thus, reduction in the sensitivity of the resist due to oxygen in the air can be prevented.
申请公布号 JPS6295524(A) 申请公布日期 1987.05.02
申请号 JP19850235148 申请日期 1985.10.23
申请人 HITACHI LTD 发明人 HAYATA YASUNARI;MOCHIJI KOZO;KIMURA TAKESHI
分类号 G03F7/20;G03C1/00;G03F7/11;H01L21/027 主分类号 G03F7/20
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