| 摘要 |
PURPOSE:To reduce influence on a lower layer element and obtain more reliable single crystal region from non-single crystal thin film by adjusting film thickness of lower insulating film and forming single crystal film from a polycrystalline film laminated on the lower insulating film. CONSTITUTION:In view of protecting the surface of Si substrate 5 from temperature rise, film thickness of the region 6a of the lower SiO2 insulation film 6 where is irradiated with the center of laser beam and the peripheral region 6b is respectively set corresponding to reflectivity of light by the interference effect of light and energy distribution of light beam. The polycrystalline thin film 7 laminated through such film 6 is irradiated with the laser beam having the Gaussian distribution. The reflectivity of center area 6a becomes maximum while reflectivity of peripheral area becomes minimum by setting film thickness of the center area 6a and peripheral area 6b as expalined above. Accordingly, temperature rise at the center 6a is suppressed and becomes lower than that of peripheral area 6b, and the hardening starts from the center area 6a during the cooling process and the film 7 is reliably single-crystallized. |
