| 摘要 |
<p>A very simple process is provided, with reduced processing time, for making a CMOS structure using a single polysilicon, or other refractory material, layer which includes forming a thin gate oxide on'both N and P type semiconductor layers (40, 12) of a common substrate (10), forming a gate electrode (50, 54) simultaneously on the N type and on the P type layers (40, 12) and selectively implanting an N type impurity to form N+ source and drain regions (58, 60) in the P type layer (12). The semiconductor layers are then oxidized to form substantially thicker oxide (66, 68), such a silicon dioxide, adjacent to the sides of the gate electrode (50) over the P type layer (12) than the thickness of the oxide (70, 72) adjacent to the sides of the gate electrode (54) over the N type layer (40). Without using a mask, a P type impurity is implanted into the N type layer to form P+ source and drain regions (78, 80).</p> |
