III-V Based semiconductor devices and a process for fabrication

摘要

Extremely high-purity and defect-free layers of III-V semiconductor materials are produced by a specific MBE process. This process as applied to GaAs includes protecting the deposition substrate with a passivating surface, removing this surface in situ, treating the bared substrate heated to a temperature below its incongruent melting point with an arsenic-containing gas, and initiating the MBE growth in an environment containing an excess of arsenic over gallium.