| 摘要 |
A body 12 of a semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate 18 of one conductivity type with a pair of spaced, substantially parallel, dove-tail shaped grooves 24 in a surface 20 thereof. Over the surface 20 of the substrate and the grooves are, in sequence, a first epitaxial layer 26 of the one conductivity type, a second epitaxial layer 28 which is the active recombination layer, a third epitaxial layer 30 of the opposite conductivity type and e.g. a fourth epitaxial layer 32 of the opposite conductivity type. The first and third layers are of material forming heterojunctions with the second active layer. The second active layer 28 has a region of uniform thickness directly over the space between the grooves. A stripe contact 36 may be provided on the fourth layer 32 directly over a region 28a of minimum thickness of the second active layer. The resulting semiconductor laser may achieve a more stable, single filament mode. <IMAGE> |
