| 摘要 |
PURPOSE:To obtain a laser, which oscillates in, a single lateral mode a lateral spread angle thereof extends over 13 deg. or more and an optical direction of a stripe recessed groove in the <011> direction and bringing the width of the groove to 1.5-3.0mum when the recessed groove is formed to a GaAs substrate with a <100> plane, a multilayer hetero-junction with a flat active region is shaped on the groove and a laser device is manufactured. CONSTITUTION:An N type GaAs current stopping layer 32, a GaAlAs groove deformation stopping layer 34 and a GaAs layer 36 are laminated on a P type GaAs substrate 30 with a <100> plane and grown in a liquid phase in an epitaxial manner, and a resist 39 having a striped pattern 38 in 1.5-3.0mum width in the <011> direction is formed through a photolithography method. A recessed groove 40 corresponding to the pattern 38 is bored through reactive ion etching, and a P type GaAlAs clad layer 42, a GaAs active layer 44, an N type GaAlAs clad layer 46 and a P type GaAs contact layer 48 are grown on the whole surface while burying the groove. |
