| 摘要 |
PURPOSE:To form a minute electrode wiring by a method wherein a reversal pattern layer of the desired electrode wiring pattern layer is formed and its groove is then filled with a high polymeric organic layer, and the desired electrode wiring pattern comprising the high polymeric organic layer is obtained by selectively removing only the reversal pattern layer. CONSTITUTION:An insulating layer 2 is formed on a semiconductor substrate 1 and an Al alloy film 3 including Cu is then formed thereon. With the normal pressure CVD method, a phosphorus silicate glass film 4 is formed on the film 3, which leads to a process wherein a reversal resist pattern 5 of the predetermined electrode wiring pattern is formed on the film 4. With the pattern 5 as a mask, the film 4 and the pattern 5 are anisotropically etched by means of CHF3 gas. The ratio of an etching rate between the film 4 and the resist film of the pattern 5 reaches 10 or more and hence a minute resist pattern is formed. Thereafter, a photo-resist 6 is filled into the groove of the film 4 by spin coating, and any unnecessary resist portion of the pattern 5 is removed by means of an O2 gas plasma treatment. A heat-treatment is applied to the resist 6 and hence it is sufficiently hardened, thereby forming a resist mask.
|
