| 摘要 |
PURPOSE:To obtain lead wirings for a ceramic package IC brazed at 700-900 deg.C by containing Si, Mn, Ni, Zn, Cu and unavoidable impurities in the prescribed wt%. CONSTITUTION:Si is contained at 0.2-1.5%, Ni is contained at 1-5%, and sufficient strength and conductivity can be provided even after heated (at 700- 900 deg.C) at brazing time. Mn is contained at approx. 0.01-1%, molten metal flow at the alloy casting time is improved, Zn is contained at 0.1-5% to remarkably improve the isolation resistance of Sn plating or Sn alloy plating layer on the surface of lead wirings, and to improve the soldability. The residue is Cu and unavoidable impurities. When the lead wirings are formed by methods such as hot machining, annealing and cold working with Cu alloy of this composition, the conductivity of the wirings is improved before brazed due to the heat at the brazing time, mechanical strength, thermal conductivity can be maintained preferably, and ceramics do not cause a crack due to the difference of thermal expansion coefficients. After brazing, the wirings may be cooled in the degree that cold crack does not occur, and F-15 alloy can be considered to be unnecessary. |
