| 摘要 |
PURPOSE:To enable to utilize for an electric isolation or an optical isolation by emitting a laser light having dosage of the degree which is equal to or shorter than the absorption end wavelength of a compound semiconductor in the wavelength and does not anneal the surface. CONSTITUTION:A P-N junction 2 is formed, for example, in the vicinity of the surface of a GaP crystalline substrate 1, a photoresist film 3 is covered on the surface of the substrate 1, and holes 4,... of the desired pattern are formed thereat. A pulse laser light 5 of 440nm of wavelength having, for example, 0.6mum of pulse width is emitted to the surface of the substrate 1 through the holes 4, and segregated layers 6,... of phosphorus are formed in the vicinity of the surface of the substrate 1 at this time. Such segregated layers of the P are near insulator and near black in color, the junction 2 is electrically isolated by the layers, and a light generated near the P-N junction is isolated. |
