| 摘要 |
PURPOSE:To obtain a conventional turn-OFF characteristic by isolating ON gate electrode and OFF gate electrode, and obtaining preferable turn-ON characteristic with ultrafine gate power as a voltage drive type such as MOS gate structure as an ON gate, thereby cooperating OFF gate with the structure. CONSTITUTION:A layer N1 is formed on a 1a layer P1, a layer P2 is further formed therein, and a layer N2 is further formed therein. An insulator 11 of oxide is arranged to cross the layers N1, P2, N2, and a gae electrode 12 is formed thereon. An anode electrode A is formed on the layer P1, a cathode electrode K is formed on the layer N2, and a gate electrode C2 is formed on the layer P2. In the state that a voltage is applied so that the anode A becomes positive to the cathode K, the gate G1 is forwardly biased (positively biased) to the layer P2 to form a channel on the layer P2 to turn ON it, and the gate G2 is biased to negative to the cathode when the ON state, thereby turning it OFF. |
