| 摘要 |
PURPOSE:To reduce the dispersion of the etching rate in a wafer and among the wafers in a same batch by a method wherein an object to be etched is placed on one of the parallel electrodes with an insulator, which has uneven thickness, in between. CONSTITUTION:A cathode 32 has a convex part and the thickness of an insulator 33 at the center of a wafer 34 is different from that at the circumfeence and the thickness at the center is thinner. When the dry-etching is performed by the parallel electrodes, usually the etching rate is large at the circumference of the wafer 34 and small at the center. However, with this composition, the etching rate at the center of the wafer 34 can be improved. Therefore, the dispersion of the etching rate as a whole is reduced and uniform dry-etching can be performed. |
