| 摘要 |
PURPOSE:To realize a simple, quick and highly accurate measurement by a method wherein, when a surface of a semiconductor substrate is removed in stages and the sheet resistance of the surface is measured at every stage to know the carrier density distribution along the depth direction of the substrate, the substrate and a monitor sample are put into a same processing chamber and their surfaces are subjected to dry etching at the same time and each sheet resistance is measured. CONSTITUTION:A rotary shaft 3, protruded from a driving mechanism 8, penetrates into a cylindrical processing chamber 1 and a sample table 5 is provided to the tip of the shaft 3 through an attachment member 4. On one end part of this sample table 5, a semiconductor substrate 6 to be measured and a monitor sample 7 are put side by side. The substrate 6 and the sample 7 are held between an electrode 9 and a facing electrode 10 and the gas from a plasma producing gas source 13 is introduced between two electrodes 9, 10 and the substrate 6 and a sample 7 are subjected to plasma etching simultaneously. This operation is repeated and at every operation the sample table 5 is rotated to make the substrate 6 and the sample 7 touch a probe of a resistance measuring instrument 14. The sheet resistance values are displayed by a diagram in an output equipment 17 through a processor 15 and the signal is also supplied to a memory 16 in which the concerning equations are memorized. |
