| 摘要 |
PURPOSE:To obtain the titled battery which can be manufactured by a stable manufacturing technology by interposing an intermediate layer made of sublimation conductive substance between a metallic electrode and an amorphous Si layer. CONSTITUTION:The action of metallic particles to the a-Si layer at the time of evaporating the metallic electrode is buffered by interposing the intermediate layer made of said substance between the metallic electrode of the a-Si solar battery and the a-Si layer. ITO (indium-tin oxide), SnO2, etc. is used as said substance. The a-Si layer 3 is film-formed on a transparent insulation substrate, e.g., a 1mm. thick glass plate 1 by the glow discharge decomposition with silane e.g. via a clear electrode 2 composed of a 20-200nm thick clear conductive film. The film 4 of said substance such as 20-100nm thick ITO and SnO2 is formed over the entire surface of said layer 3 by vapor deposition, and the upper part thereof is covered with the metallic electrode 5 of Al or Al/Ti film-formed by vapor deposition method in the same manner as conventional. The thickness of said electrode is for example 1-2mum. |
