发明名称 IMPROVED DEVELOPING SOLUTION FOR POSITIVE TYPE PHOTORESIST
摘要 PURPOSE:To improve developability by adding one or >=2 kinds selected from the group consisting of aliphat. ketones, cyclic ethers and tertiary amines to a developing soln. for a positive type photoresist consisting of an aq. quaternary ammonium hydroxide soln. CONSTITUTION:A slight amt. of a solvent which dissolves thoroughly the insoluble matter formed by coupling of unexposed quinondiazide and novolack phenolic resin as well as a coupling inhibiting agent are added to an aq. quaternary ammonium hydroxide soln. used as an org. alkali developing soln. of a quinonediazide positive type resist. The good solvent for the product formed by coupling is exemplified by aliphat. ketones, cyclic ethers and tertiary amines. The content thereof in the developing soln. is 5-1,000ppm, more preferably 10-200ppn. The coupling inhibiting agent is exemplified by a primary amine and secondary amine and the content thereof is 5-500ppm.
申请公布号 JPS59182444(A) 申请公布日期 1984.10.17
申请号 JP19830058386 申请日期 1983.04.01
申请人 SUMITOMO KAGAKU KOGYO KK 发明人 NIWA KENJI;ICHIKAWA ICHIROU
分类号 G03C1/72;G03F7/32 主分类号 G03C1/72
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