发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the generation of stress due to the thermal expansion of internal silicon gel, and to improve reliability by thermally expanding a silicon gel layer previously, completely curing a resin layer as the volume of the silicon gel layer in case of the thermal expansion is left as it is maintained and fixing the resin layer to other parts. CONSTITUTION:A semiconductor chip 13 and a bonding wire 14 extracting an electrode for the chip are coated, a silicon gel layer 22 protecting these chip and wire is cured, a semimanufactured good is placed on a heater set at a temperature such as one of 120-130 deg.C, and left as it is and the reaching of the temperature of the semimanufactured good to 120-130 deg.C is ensured, and epoxy resin 23 for sealing preheated at approximately 70-80 deg.C is injected. The resin is injected completely to all semimanufactured goods, and the semimanufactured goods are entered into an oven set at 130+ or -5 deg.C without lowering their temperatures from the temperature of 120-130 deg.C, and cured for eight hr or more in the oven, thus completing assembly.</p>
申请公布号 JPS59181627(A) 申请公布日期 1984.10.16
申请号 JP19830055984 申请日期 1983.03.31
申请人 TOSHIBA KK 发明人 TANI KEIZOU;OGASAWARA MASAHIRO
分类号 H01L21/56;H01L23/24;H01L23/28;H05K7/00 主分类号 H01L21/56
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