| 摘要 |
PURPOSE:To prevent the leakage current without complicating the control of a threshold voltage by implanting impurity ions of the reverse conductive type to source and drain regions to a channel region forming portion, then forming a conductor film on an insulating film, and then diffusing an impurity. CONSTITUTION:An SiO2 film a is formed on an Si substrate 1, and a resist pattern 3 is formed on the portion except the channel region forming portin of the film 2. Then, with the pattern 3 as a mask a boron implanted layer 4 is formed on the front surface of the exposed film 2. Then, the pattern 3 is removed, a polycrystalline silicon layer 5 is formed on the entire surface, the layer 5 is patterned, and an element region 6 is formed. Then, a thermally oxidized film 7 is formed around the region 6, the boron in the layer 6 is diffused to the back surface of the region 6 to form a P type impurity layer 8. Then, a gate electrode, a gate insulating film 10 and an n<+> type source, drain regions 11, 12 are sequentially formed to manufacture a semiconductor device. |
