| 摘要 |
PURPOSE:To enhance the uniformity of a channel region and to reduce series parasitic resistances of source and drain by forming a channel region under electrode without step of etching a GaAs operation layer. CONSTITUTION:Silicon ions are implanted to the surface of a GaAs insulating substrate 5 to form an N type GaAs operation layer 4. A high heat resistant gate electrode 1 is formed on the layer 4, and an N type GaAs layer 9 is accumulated on the entire layers of the layer 4 and the electrode 1. Ohmic metal 10 is formed on the portions to become a source electrode 2 and a drain electrode 3 and the layer 9 on the electrode 1, a photoresist 11 is coated on the entire wafer and dried. Then, argon is introduced while the substrate 5 is rotating, the photoresist 11, metal 10 and the layer 10 on the electrode 1 are removed so that the layer 9 on the electrode 1 does not affect the influence to the FET characteristic. Thus, the FET characteristic wherein the uniformity of the channel region is high, and the series parasitic resistances of the source and drain are reduced is obtained. |
