| 摘要 |
PURPOSE:To prevent the formation of a space charge layer within an element and improve electrical characteristics of the III-V group compound semiconductor device by disposing a surface stabilizing film as thin as 10 atom layers or less having the smaller interface level for an insulating film than that of semiconductor layer to the interface between a semiconductor layer forming an active layer and the insulating film. CONSTITUTION:In case a compound thin film layer of indium 27% + gallium 23% + arsenic 50% having a thickness as 4 atom layers are provided as the surface stabilizing film 16 to the interface between the GaAs layer 12 and a silicon dioxide insulating film 17 for surface protection in a gallium arsenide FET, the interface level between the compound semiconductor layer and the insulating film for surface protection is reduced and the space charge layer is not formed within the active layer 12, and thereby electrical characteristics of the III-V group compound semiconductor device can be improved. In addition to the InGaAs compound, the AlGaAs compound, InGaAsP compound, InP compound, Si, Ge etc. can be used as the surface stabilizing film, resulting in almost the same effect. |
