| 摘要 |
PURPOSE:To isolate the surface so as to be flatten, and to miniaturize a device by forming an insulating layer with an opening section onto a main surface, shaping semiconductor layers to the upper section of the insulating layer and the opening section so that each upper surface is brought to approximately the same height through vapor phase growth and forming an element to the semiconductor layer of the opening section. CONSTITUTION:A semiconductor base body, a main surface thereof has a 100 face, such as a silicon semiconductor base body 11 is prepared, and an insulating layer in predetermined thickness such as an SiO2 layer 12 is applied and formed onto the base body. The necessary section of the SiO2 layer 12 is removed through selective etching, etc. to shape an opening section 13. An epitaxial layer 14 and a polycrystalline silicon layer 15 are each formed so that several upper surface is brought to approximately the same height. The vapor phase grown layer is etched only by the thickness of the polycrystalline silicon layer 15 extending over the whole surface. A necessary element is formed to the epitaxial layer 14 in the opening section 13. Since the element is formed to the epitaxial layer 14, the minute element is constituted, and the minute element region is isolated by the SiO2 layer 13. |
