| 摘要 |
PURPOSE:To obtain the titled device of a large static capacitance per unit area and a small diode area and made suitable for high integration by forming a capacitor and a diode in lamination form, when said device having the capacitor and the diode is manufactured. CONSTITUTION:An N<+> type buried region 2 serving as the third electrode is diffusion-formed on a P type Si substrate 1, a thick element isolation oxide film 3 is provided from the outer periphery thereof onto the substrate 1, and N type and N<-> type epitaxial layers 4 and 5 connected to each other are epitaxially grown on said region 2. Next, a Pd or Pt silicide layer 6 serving as the second electrode is adhered on the layer 4, and said layer is covered with a Ta oxide insulation film 7 whose end part contacts the layer 5. Thereafter, an Al layer 8 serving as the first electrode is adhered from on the film 7 to the layer 5, and then an Al electrode 9 is adhered to the end part of the layer 6 and thus extended on the film 3. Thus, the Schottky barrier diode is generated between the layers 6 and 4 and the capacitor between the electrode 8 and the layer 6, respectively. |
