| 发明名称 |
METHOD OF PREPARING HG1-X CDX TE CRYSTALS |
| 摘要 |
Process for preparing crystals of Hg1-x Cdx Te, in which ingots of HgTe and of CdTe are made to pass through a solvent zone, characterized in that it comprises the step of using as solvent a mixture of tellurium, of HgTe and of CdTe in proportions corresponding to thermodynamic balance. |
| 申请公布号 |
EP0060744(B1) |
申请公布日期 |
1984.09.26 |
| 申请号 |
EP19820400310 |
申请日期 |
1982.02.22 |
| 申请人 |
SOCIETE ANONYME DE TELECOMMUNICATIONS |
发明人 |
TRIBOULET, ROBERT GEORGES LUCIEN;DIDIER, GERARD EMILE JOSEPH;DURAND, ALAIN RENE LUCIEN;ROYER, MICHEL |
| 分类号 |
C01B19/04;C30B11/10;C30B13/00;C30B13/02;C30B29/48;H01L21/368;H01L31/10;H01L31/18 |
主分类号 |
C01B19/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
