| 摘要 |
PURPOSE:To realize the titled device, whereby a higher integration can be effected at a higher density, by a method wherein, when step parts to be fitted a cap for sealing in are provided along the inner circumference of an opening part of a ceramic container to accomodate a semiconductor element in and the step parts are adhesion-sealed, a metalized layer is formed on both faces of the plane parts and side parts of the step parts and the cap is adhered thereto. CONSTITUTION:When a ceramic container 1 to house a semiconductor element 2 in is molded by sintering, step parts 4 to be fitted a cap 3 made of kovar for sealing in have been formed along the inner circumference of an opening part provided on one side thereof, while a metalized layer 7 formed by a baking of tungsten paste has been made to coat to the plane parts 41 and the side parts 42 of the step parts 4. Moreover, the necessary number of connection pad 5 are respectively fixed on the surface and back surface of the container 1 and the semiconductor element 2 adhered to the lower surface of a heat radiating plate 6 is inserted into an opening part provided on the other side of the container 1. After that, the cap 3 made of kovar is fitted in the metalized layer 7 while the end part thereof is being made to abut upon the metalized layer 7 and these are fixed using a solder 8. According to such a method, holding of air-tightness can be sufficiently effected even though the width of the plane parts 41 is made narrower. |
