| 摘要 |
PURPOSE:To give a current constriction effect by converting one part of a first conduction type semiconductor substrate into a second conduction type, forming a groove reaching to a first conduction type region in the semiconductor substrate and laminating semiconductor layers of multilayers. CONSTITUTION:A P type impurity is diffused to the whole surface of a crystal, and a P type impurity diffusion region 2 reaching to depth of 1mum is formed from the surface of an N type GaAs substrate. A SiO2 film 11 is formed on the surface of the crystal, a window is bored to the SiO2 film through a normal photo-resist process, and a groove is shaped through chemical etching. The depth of the groove takes size in which the groove penetrates the P type impurity diffusion layer 2 and reaches to a region in which the conductivity of the semiconductor substrate 1 is not inverted. An Al0.6Ga0.4As layer 10 is removed through a dip in a HF solution. |
