| 摘要 |
PURPOSE:To contrive to enhance electrostatic breakdown strength of a semiconductor device by a method wherein the semiconductor elements of the same structure and the same size are connected in antiparallel with semiconductor junctions. CONSTITUTION:A protecting transistor (TR)37 is connected to TR38 to be protected making a collector 35 in common, and making an emitter 36 and a base 34 in parallel in the reverse direction. Accordingly, when static electricity is applied, because the TR37 can be used as a shunt path, electrostatic breakdown strength is enhanced more than the TR of a simple. Moreover by making the TR37 to have the same structure and the same size with the TR38, the problem that electrostatic breakdown strength becomes to hard to be enhanced owing to generation of concentration of a current to the element on one side is dissolved. Accordingly, electrostatic breakdown strengths of both the cases when static electricity is applied in the forward direction balancing favorably and when static electricity is applied in the reverse direction can be enhanced still more at the same time. |
